SI4684DY-T1-GE3
- Mfr.Part #
- SI4684DY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A 8SO
- Stock
- 37,486
- In Stock :
- 37,486
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Number of Pins :
- 8
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 16A
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±12V
- Pin Count :
- 8
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e3
- Series :
- TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 2080pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 50A
- Terminal Finish :
- PURE MATTE TIN
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.0094Ohm
- Gate to Source Voltage (Vgs) :
- 12V
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 2.5W Ta 4.45W Tc
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 186.993455mg
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 16A, 10V
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Datasheets
- SI4684DY-T1-GE3

N-Channel Tape & Reel (TR) 9.4m Ω @ 16A, 10V ±12V 2080pF @ 15V 45nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4684DY-T1-GE3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 20 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2080pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is a peak drain current of 50A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4684DY-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 30V voltage
based on its rated peak drain current 50A.
SI4684DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4684DY-T1-GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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