SI4684DY-T1-E3
- Mfr.Part #
- SI4684DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A 8SO
- Stock
- 9,047
- In Stock :
- 9,047
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 9.4mOhm
- Fall Time (Typ) :
- 11 ns
- Series :
- TrenchFET®
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 12A
- Width :
- 4mm
- Supplier Device Package :
- 8-SO
- Number of Pins :
- 8
- Power Dissipation-Max :
- 2.5W Ta 4.45W Tc
- Height :
- 1.55mm
- Rds On (Max) @ Id, Vgs :
- 9.4mOhm @ 16A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2.5W
- Mount :
- Surface Mount
- Turn On Delay Time :
- 12 ns
- Rds On Max :
- 9.4 mΩ
- Turn-Off Delay Time :
- 45 ns
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2080pF @ 15V
- Input Capacitance :
- 2.08nF
- Rise Time :
- 12ns
- Published :
- 2011
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Number of Channels :
- 1
- Number of Elements :
- 1
- Weight :
- 186.993455mg
- Drain to Source Voltage (Vdss) :
- 30V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 12V
- Vgs (Max) :
- ±12V
- Datasheets
- SI4684DY-T1-E3

N-Channel Tape & Reel (TR) 9.4mOhm @ 16A, 10V ±12V 2080pF @ 15V 45nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
SI4684DY-T1-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2080pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 9.4mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI4684DY-T1-E3 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 45 ns
single MOSFETs transistor is 9.4mOhm
a 30V drain to source voltage (Vdss)
SI4684DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4684DY-T1-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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