SI4668DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G8

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

16V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

13 Weeks

Fall Time (Typ) :

18 ns

ECCN Code :

EAR99

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

16.2A

Published :

2016

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

16.2A Tc

Vgs (Max) :

±16V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1654pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0105Ohm

Number of Terminations :

8

Terminal Position :

Dual

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Turn-Off Delay Time :

73 ns

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.5W Ta 5W Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

11.5A

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 15A, 10V

Number of Elements :

1

Drain to Source Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single