SI4666DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Pin Count :

8

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Number of Channels :

1

Weight :

506.605978mg

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc

Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

10m Ω @ 10A, 10V

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Mount :

Surface Mount

Published :

2014

Gate to Source Voltage (Vgs) :

12V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1145pF @ 10V

Lead Free :

Lead Free

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Turn On Delay Time :

13 ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

Rise Time :

12ns

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

25V

Number of Terminations :

8

Nominal Vgs :

600 mV

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

Turn-Off Delay Time :

27 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Continuous Drain Current (ID) :

16.5A

Terminal Finish :

PURE MATTE TIN

Power Dissipation-Max :

2.5W Ta 5W Tc