SI4660DY-T1-E3
- Mfr.Part #
- SI4660DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 23.1A 8SO
- Stock
- 2,449
- In Stock :
- 2,449
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 14ns
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 23.1A Tc
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Vgs (Max) :
- ±16V
- Turn On Delay Time :
- 25 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 15A, 10V
- Series :
- TrenchFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 25V
- Drain Current-Max (Abs) (ID) :
- 23.1A
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 3.1W Ta 5.6W Tc
- Gate to Source Voltage (Vgs) :
- 16V
- Fall Time (Typ) :
- 22 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2410pF @ 15V
- Published :
- 2016
- JESD-30 Code :
- R-PDSO-G8
- Continuous Drain Current (ID) :
- 17.2A
- Turn-Off Delay Time :
- 95 ns
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Element Configuration :
- Single
- Datasheets
- SI4660DY-T1-E3

N-Channel Tape & Reel (TR) 5.8m Ω @ 15A, 10V ±16V 2410pF @ 15V 45nC @ 10V 25V 8-SOIC (0.154, 3.90mm Width)
SI4660DY-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2410pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 23.1A.As a result of its turn-off delay time, which is 95 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The transistor must receive a 25V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4660DY-T1-E3 Features
a continuous drain current (ID) of 17.2A
the turn-off delay time is 95 ns
a 25V drain to source voltage (Vdss)
SI4660DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4660DY-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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