SI4654DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

28.6A Tc

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

18.6A

Drain-source On Resistance-Max :

0.004ohm

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

10ns

Length :

5mm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

10 ns

ECCN Code :

EAR99

Published :

2014

Mount :

Surface Mount

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 15V

Number of Pins :

8

Drain to Source Breakdown Voltage :

25V

Pin Count :

8

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

Series :

TrenchFET®

Height :

1.5mm

JESD-609 Code :

e3

Terminal Position :

Dual

Turn-Off Delay Time :

50 ns

Time@Peak Reflow Temperature-Max (s) :

40

Width :

4mm

Rds On (Max) @ Id, Vgs :

4m Ω @ 15A, 10V

Power Dissipation-Max :

2.5W Ta 5.9W Tc

FET Type :

N-Channel

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

30 ns

Number of Elements :

1

Vgs (Max) :

±16V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Weight :

186.993455mg

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount