SI4654DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

18.6A

Transistor Application :

SWITCHING

Fall Time (Typ) :

10 ns

Drain-source On Resistance-Max :

0.004ohm

Power Dissipation-Max :

2.5W Ta 5.9W Tc

Weight :

186.993455mg

Width :

4mm

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

28.6A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Length :

5mm

Drain to Source Breakdown Voltage :

25V

Pin Count :

8

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Height :

1.5mm

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 15V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4m Ω @ 15A, 10V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

50 ns

Radiation Hardening :

No

Turn On Delay Time :

30 ns

Number of Channels :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

MATTE TIN

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±16V

Published :

2013

Rise Time :

10ns