SI4646DY-T1-E3
- Mfr.Part #
- SI4646DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A 8SO
- Stock
- 16,369
- In Stock :
- 16,369
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 5mm
- Drain to Source Voltage (Vdss) :
- 30V
- Rise Time :
- 13ns
- Continuous Drain Current (ID) :
- 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Height :
- 1.55mm
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 11.5 mΩ
- Min Operating Temperature :
- -55°C
- Series :
- SkyFET®, TrenchFET®
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Turn-Off Delay Time :
- 29 ns
- Power Dissipation-Max :
- 3W Ta 6.25W Tc
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Resistance :
- 11.5mOhm
- Weight :
- 186.993455mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- 8-SO
- Input Capacitance (Ciss) (Max) @ Vds :
- 1790pF @ 15V
- Mounting Type :
- Surface Mount
- Width :
- 4mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Input Capacitance :
- 1.79nF
- Rds On (Max) @ Id, Vgs :
- 11.5mOhm @ 10A, 10V
- Fall Time (Typ) :
- 12 ns
- Max Operating Temperature :
- 150°C
- Published :
- 2013
- Turn On Delay Time :
- 23 ns
- Mount :
- Surface Mount
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Datasheets
- SI4646DY-T1-E3

N-Channel Tape & Reel (TR) 11.5mOhm @ 10A, 10V ±20V 1790pF @ 15V 45nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
SI4646DY-T1-E3 Overview
A device's maximal input capacitance is 1790pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 29 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 11.5mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI4646DY-T1-E3 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 29 ns
single MOSFETs transistor is 11.5mOhm
a 30V drain to source voltage (Vdss)
SI4646DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4646DY-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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