SI4638DY-T1-E3

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Mfr.Part #
SI4638DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 22.4A 8SO
Stock
27
In Stock :
27

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Mounting Type :
Surface Mount
Published :
2009
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation-Max :
3W Ta 5.9W Tc
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
22.4A Tc
Drain to Source Resistance :
6.5mOhm
Drain to Source Breakdown Voltage :
30V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package :
8-SO
Drain to Source Voltage (Vdss) :
30V
Mount :
Surface Mount
Vgs (Max) :
±20V
Max Operating Temperature :
150°C
Rds On (Max) @ Id, Vgs :
6.5mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
4190pF @ 15V
Turn-Off Delay Time :
44 ns
Factory Lead Time :
13 Weeks
Input Capacitance :
4.19nF
Vgs(th) (Max) @ Id :
2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Rise Time :
19ns
Series :
SkyFET®, TrenchFET®
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
22.4A
Rds On Max :
6.5 mΩ
Min Operating Temperature :
-55°C
Fall Time (Typ) :
18 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
SI4638DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4638DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), SI4638DY-T1-E3 pinout, SI4638DY-T1-E3 datasheet PDF, SI4638DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4638DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4638DY-T1-E3


N-Channel Tape & Reel (TR) 6.5mOhm @ 15A, 10V ±20V 4190pF @ 15V 100nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

SI4638DY-T1-E3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4190pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 44 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 6.5mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

SI4638DY-T1-E3 Features


a continuous drain current (ID) of 22.4A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 6.5mOhm
a 30V drain to source voltage (Vdss)


SI4638DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4638DY-T1-E3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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