SI4636DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

60A

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±16V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Number of Channels :

1

Continuous Drain Current (ID) :

12.7A

Current - Continuous Drain (Id) @ 25°C :

17A Tc

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Radiation Hardening :

No

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 10A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

20 mJ

Turn On Delay Time :

32 ns

Number of Terminations :

8

Terminal Finish :

PURE MATTE TIN

Power Dissipation-Max :

2.5W Ta 4.4W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

19 ns

Input Capacitance (Ciss) (Max) @ Vds :

2635pF @ 15V

Rise Time :

87ns

Number of Elements :

1

Series :

TrenchFET®

Power Dissipation :

2.5W

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Pin Count :

8

Turn-Off Delay Time :

43 ns

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE