SI4634DY-T1-E3
- Mfr.Part #
- SI4634DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 24.5A 8SO
- Stock
- 8,224
- In Stock :
- 8,224
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 5.2mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 3150pF @ 15V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.5W Ta 5.7W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 16.3A
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Series :
- TrenchFET®
- Power Dissipation :
- 2.5W
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 33 ns
- Pin Count :
- 8
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 24.5A Tc
- Weight :
- 186.993455mg
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 5mm
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 15A, 10V
- Pulsed Drain Current-Max (IDM) :
- 70A
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Height :
- 1.5mm
- Mounting Type :
- Surface Mount
- Width :
- 4mm
- Terminal Finish :
- MATTE TIN
- Vgs(th) (Max) @ Id :
- 2.6V @ 250μA
- Factory Lead Time :
- 14 Weeks
- Drain to Source Breakdown Voltage :
- 30V
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn On Delay Time :
- 14 ns
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Number of Terminations :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2013
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 10ns
- Fall Time (Typ) :
- 8 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Datasheets
- SI4634DY-T1-E3

N-Channel Tape & Reel (TR) 5.2m Ω @ 15A, 10V ±20V 3150pF @ 15V 68nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4634DY-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3150pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4634DY-T1-E3 Features
a continuous drain current (ID) of 16.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 70A.
SI4634DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4634DY-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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