SI4628DY-T1-GE3
- Mfr.Part #
- SI4628DY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 38A 8SO
- Stock
- 17,894
- In Stock :
- 17,894
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount, Through Hole
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 13 ns
- Threshold Voltage :
- 1V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 8
- Rise Time :
- 20ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 3.5W Ta 7.8W Tc
- Input Capacitance :
- 3.45nF
- Supplier Device Package :
- 8-SO
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 28 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 87nC @ 10V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 4mm
- Length :
- 5mm
- Published :
- 2013
- Input Capacitance (Ciss) (Max) @ Vds :
- 3450pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Number of Channels :
- 1
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 3mOhm @ 20A, 10V
- Rds On Max :
- 3 mΩ
- Resistance :
- 3mOhm
- Power Dissipation :
- 7.8W
- Packaging :
- Tape and Reel (TR)
- Series :
- SkyFET®, TrenchFET®
- Height :
- 1.55mm
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Weight :
- 186.993455mg
- Turn-Off Delay Time :
- 39 ns
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 2.4MOhm
- Continuous Drain Current (ID) :
- 38mA
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SI4628DY-T1-GE3

N-Channel Tape & Reel (TR) 3mOhm @ 20A, 10V ±20V 3450pF @ 15V 87nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
SI4628DY-T1-GE3 Overview
A device's maximum input capacitance is 3450pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 38mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 39 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 2.4mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI4628DY-T1-GE3 Features
a continuous drain current (ID) of 38mA
the turn-off delay time is 39 ns
single MOSFETs transistor is 2.4mOhm
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
SI4628DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4628DY-T1-GE3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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