SI2304DS,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Power Dissipation :

830mW

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Series :

TrenchMOS™

Terminal Form :

Gull wing

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 1mA

ECCN Code :

EAR99

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.19Ohm

Number of Terminations :

3

Terminal Position :

Dual

Qualification Status :

Not Qualified

Power Dissipation-Max :

830mW Tc

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 10V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

HTS Code :

8541.29.00.75

Continuous Drain Current (ID) :

1.7A

Transistor Application :

SWITCHING

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Feedback Cap-Max (Crss) :

56 pF

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 10V

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

117m Ω @ 500mA, 10V

Pin Count :

3