SI1026X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

2.5V

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

20 ns

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Base Part Number :

SI1026

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

305mA

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 500mA, 10V

Gate to Source Voltage (Vgs) :

20V

Published :

2008

Resistance :

3Ohm

Pbfree Code :

yes

Transistor Application :

SWITCHING

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

600μm

Drain Current-Max (Abs) (ID) :

0.305A

Width :

1.2mm

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 25V

Power Dissipation :

250mW

Number of Elements :

2

Length :

1.7mm

REACH SVHC :

Unknown

Weight :

32.006612mg

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

250mW

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Continuous Drain Current (ID) :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Additional Feature :

LOW THRESHOLD

Turn On Delay Time :

15 ns

Package / Case :

SOT-563, SOT-666

Radiation Hardening :

No

Factory Lead Time :

14 Weeks