SI1024X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

6V

Power - Max :

250mW

Dual Supply Voltage :

20V

Mount :

Surface Mount

Rds On Max :

700 mΩ

Number of Elements :

2

Number of Channels :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Weight :

8.193012mg

Nominal Vgs :

900 mV

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-563, SOT-666

Max Power Dissipation :

250mW

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Series :

TrenchFET®

Element Configuration :

Dual

Published :

2016

Supplier Device Package :

SC-89-6

Base Part Number :

SI1024

Number of Pins :

6

Threshold Voltage :

900mV

Height :

600μm

Continuous Drain Current (ID) :

600mA

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Drain to Source Resistance :

1.25Ohm

FET Feature :

Logic Level Gate

Length :

1.7mm

Width :

1.2mm

Power Dissipation :

250mW

Current - Continuous Drain (Id) @ 25°C :

485mA

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

700mOhm @ 600mA, 4.5V

Resistance :

700mOhm

Drain to Source Voltage (Vdss) :

20V