SI1023X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

3

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 350mA, 4.5V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOW THRESHOLD

REACH SVHC :

Unknown

Package / Case :

SOT-563, SOT-666

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Transistor Element Material :

SILICON

Threshold Voltage :

-450mV

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-350mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.2mm

Mounting Type :

Surface Mount

Terminal Form :

Flat

Weight :

8.193012mg

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

SI1023

Published :

2016

Drain to Source Breakdown Voltage :

-20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Number of Terminations :

6

Mount :

Surface Mount

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Length :

1.7mm

Gate to Source Voltage (Vgs) :

6V

FET Type :

2 P-Channel (Dual)

Pin Count :

6

Resistance :

1.2Ohm

Max Power Dissipation :

250mW

Height :

600μm

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

370mA

JESD-30 Code :

R-PDSO-F6

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

250mW