SCTW90N65G2V

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Mfr.Part #
SCTW90N65G2V
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
SICFET N-CH 650V 90A HIP247
Stock
2
In Stock :
2

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Operating Temperature :
-55°C~200°C TJ
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
110A
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
5V @ 250μA
Reach Compliance Code :
not_compliant
Package / Case :
TO-247-3
Base Part Number :
SCTW90
Drain to Source Voltage (Vdss) :
650V
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
25m Ω @ 50A, 18V
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 400V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
390W Tc
Vgs (Max) :
+22V, -10V
Pulsed Drain Current-Max (IDM) :
220A
DS Breakdown Voltage-Min :
650V
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 18V
Drive Voltage (Max Rds On,Min Rds On) :
18V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Transistor Application :
SWITCHING
Datasheets
SCTW90N65G2V
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics SCTW90N65G2V from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~200°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, Base Part Number:SCTW90, SCTW90N65G2V pinout, SCTW90N65G2V datasheet PDF, SCTW90N65G2V amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics SCTW90N65G2V ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics SCTW90N65G2V


N-Channel 25m Ω @ 50A, 18V +22V, -10V 3300pF @ 400V 157nC @ 18V 650V TO-247-3

SCTW90N65G2V Description


SCTW90N65G2V belongs to the family of Silicon carbide power MOSFETs manufactured by STMicroelectronics based on the advanced and innovative 2nd generation SiC MOSFET technology. Based on its specific characteristics, including low on-resistance per unit area and advanced switching performance, SCTW90N65G2V is well suited for switching applications, power supply for renewable energy systems, etc.



SCTW90N65G2V Features


  • Low gate charge

  • Low input capacitances

  • Low on-resistance per unit area

  • Advanced switching performance

  • Available in the HiP247 package



SCTW90N65G2V Applications


  • Switching applications

  • High-frequency DC-DC converters

  • Power supply for renewable energy systems


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