SCTW35N65G2VAG
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- Mfr.Part #
- SCTW35N65G2VAG
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 650V 45A HIP247
- Stock
- 540
- In Stock ：
- 540
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370pF @ 400V
- Vgs (Max) :
- +22V, -10V
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 240W Tc
- Rds On (Max) @ Id, Vgs :
- 67m Ω @ 20A, 20V
- Drain to Source Voltage (Vdss) :
- 650V
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V 20V
- Series :
- Automotive, AEC-Q101
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~200°C TJ
- Datasheets
- SCTW35N65G2VAG
N-Channel 67m Ω @ 20A, 20V +22V, -10V 1370pF @ 400V 73nC @ 20V 650V TO-247-3
SCTW35N65G2VAG Description
ST's superior and revolutionary 2nd generation SiC MOSFET technology was used to build the SCTW35N65G2VAG silicon carbide Power MOSFET, which has a surprisingly low on-resistance per unit area and very strong switching performance.
SCTW35N65G2VAG Features
-
The very fast and robust intrinsic body diode
-
Low capacitance
-
AEC-Q101 qualified
SCTW35N65G2VAG Applications
-
Switching mode power supply
-
EV chargers
-
DC-DC converters
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