SCTW100N65G2AG
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- Mfr.Part #
- SCTW100N65G2AG
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 650V 100A HIP247
- Stock
- 10,294
- In Stock ：
- 10,294
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 50A, 18V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Drain to Source Voltage (Vdss) :
- 650V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- Automotive, AEC-Q101
- Input Capacitance (Ciss) (Max) @ Vds :
- 3315pF @ 520V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- +22V, -10V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 162nC @ 18V
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Power Dissipation-Max :
- 420W Tc
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~200°C TJ
- Datasheets
- SCTW100N65G2AG
N-Channel 26m Ω @ 50A, 18V +22V, -10V 3315pF @ 520V 162nC @ 18V 650V TO-247-3
SCTW100N65G2AG Description
SCTW100N65G2AG is an Automotive-grade silicon carbide Power MOSFET manufactured by STMicroelectronics. The silicon carbide Power MOSFET SCTW100N65G2AG has been developed using ST's advanced and innovative 2nd generation SiC MOSFET technology.
The STMicroelectronics SCTW100N65G2AG features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
SCTW100N65G2AG Features
-
The very fast and robust intrinsic body diode
-
Extremely low gate charge and input capacitance
-
Very high operating junction temperature capability (TJ = 200 °C)
-
In Hip-247 package
-
AEC-Q101 qualified
SCTW100N65G2AG Applications
-
Main inverter (electric traction)
-
DC/DC converter for EV/HEV
-
On board charger (OBC)
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