SCTW35N65G2V
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- Mfr.Part #
- SCTW35N65G2V
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 650V 45A HIP247
- Stock
- 782
- In Stock ：
- 782
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- +22V, -10V
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 67m Ω @ 20A, 20V
- Package / Case :
- TO-247-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370pF @ 400V
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V 20V
- Power Dissipation-Max :
- 240W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Drain to Source Voltage (Vdss) :
- 650V
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Datasheets
- SCTW35N65G2V
N-Channel 67m Ω @ 20A, 20V +22V, -10V 1370pF @ 400V 73nC @ 20V 650V TO-247-3
SCTW35N65G2V Description
This silicon carbide power MOSFET device is developed using advanced and innovative second generation silicon carbide MOSFET technology from STMicroelectronics. The device has extremely low on-resistance per unit area and very good switching performance. The change of switching loss has almost nothing to do with the junction temperature.
SCTW35N65G2V Features
? Very fast and robust intrinsic body diode
? Extremely low gate charge and input capacitance
? Very high operating junction temperature capability (TJ = 200°C)
SCTW35N65G2V Applications
? Switching mode power supply
? DC-DC converters
? Industrial motor control
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