SCT2750NYTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

1700V

Current - Continuous Drain (Id) @ 25°C :

5.9A Tc

Rds On (Max) @ Id, Vgs :

975m Ω @ 1.7A, 18V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.975Ohm

Power Dissipation-Max :

57W Tc

Vgs(th) (Max) @ Id :

4V @ 630μA

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

DS Breakdown Voltage-Min :

1700V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

+22V, -6V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

18V

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 800V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Published :

2017

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

14A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Factory Lead Time :

19 Weeks

Operating Temperature :

175°C TJ

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

5.9A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 18V

Surface Mount :

yes