S29GL032N11TFIV13

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Format :

Flash

JESD-609 Code :

e3

Supply Voltage :

3V

Common Flash Interface :

yes

Length :

18.4mm

Width :

14mm

Toggle Bit :

yes

Standby Current-Max :

0.000005A

Terminal Position :

Dual

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Write Cycle Time - Word, Page :

110ns

Power Supplies :

1.8/3.33/3.3V

Factory Lead Time :

18 Weeks

Height Seated (Max) :

1.2mm

Boot Block :

BOTTOM/TOP

Memory Interface :

Parallel

Sector Size :

64K

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Width :

16

RoHS Status :

ROHS3 Compliant

Programming Voltage :

3V

Number of Terminations :

56

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ASYNCHRONOUS

Terminal Finish :

MATTE TIN

Number of Functions :

1

Published :

2015

Number of Sectors/Size :

64

Voltage - Supply :

1.65V~3.6V

Surface Mount :

yes

ECCN Code :

3A991.B.1.A

Page Size :

8/16words

Supply Voltage-Min (Vsup) :

2.7V

Ready/Busy :

yes

Qualification Status :

Not Qualified

Supply Current-Max :

0.05mA

Access Time (Max) :

110 ns

Series :

GL-N

Data Polling :

yes

Terminal Pitch :

0.5mm

Command User Interface :

yes

Memory Type :

Non-Volatile

Memory Density :

33554432 bit

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Organization :

2MX16

JESD-30 Code :

R-PDSO-G56

Alternate Memory Width :

8

Operating Temperature :

-40°C~85°C TA

HTS Code :

8542.32.00.51

Memory Size :

32Mb 4M x 8 2M x 16

Time@Peak Reflow Temperature-Max (s) :

40

Supply Voltage-Max (Vsup) :

3.6V