RZQ050P01TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

420 ns

Turn On Delay Time :

12 ns

Width :

1.8mm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±10V

Published :

2004

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

20A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Breakdown Voltage :

-12V

Power Dissipation-Max :

600mW Ta

FET Type :

P-Channel

Pin Count :

6

Rise Time :

100ns

JESD-609 Code :

e1

Continuous Drain Current (ID) :

5A

Number of Terminations :

6

Number of Elements :

1

Threshold Voltage :

-300mV

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 1mA

Nominal Vgs :

-300 mV

Rds On (Max) @ Id, Vgs :

26m Ω @ 5A, 4.5V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

5A

Factory Lead Time :

20 Weeks

Gate to Source Voltage (Vgs) :

10V

Fall Time (Typ) :

225 ns

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Height :

950μm

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation :

1.25W

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 6V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Length :

3mm

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Drain to Source Voltage (Vdss) :

12V

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount