RZQ045P01TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

10

Number of Elements :

1

Lead Free :

Lead Free

Pin Count :

6

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Radiation Hardening :

No

Number of Terminations :

6

Turn On Delay Time :

12 ns

Drain to Source Breakdown Voltage :

12V

JESD-609 Code :

e1

Published :

2008

Vgs(th) (Max) @ Id :

1V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Terminal Position :

Dual

Rise Time :

75ns

FET Type :

P-Channel

Continuous Drain Current (ID) :

4.5A

Pulsed Drain Current-Max (IDM) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Resistance :

100MOhm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 6V

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

26 Weeks

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

ECCN Code :

EAR99

Turn-Off Delay Time :

390 ns

Fall Time (Typ) :

75 ns

Vgs (Max) :

±10V

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate to Source Voltage (Vgs) :

10V

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.5A, 4.5V

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.25W Ta

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.25W

Mount :

Surface Mount