RW1E025RPT2CR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PDSO-F6

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Terminal Finish :

TIN COPPER

Power Dissipation-Max :

700mW Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

2.5A

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Drain-source On Resistance-Max :

0.075Ohm

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Terminations :

6

FET Type :

P-Channel

Terminal Form :

Flat

JESD-609 Code :

e2

DS Breakdown Voltage-Min :

30V

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Vgs (Max) :

±20V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.5A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA