RW1E014SNT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

Pin Count :

6

Lead Free :

Lead Free

Rds On Max :

240 mΩ

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

170mOhm

Packaging :

Cut Tape (CT)

Terminal Form :

Flat

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Copper (Sn/Cu)

Max Power Dissipation :

700mW

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Transistor Application :

SWITCHING

Mount :

Surface Mount

Continuous Drain Current (ID) :

1.4A

Factory Lead Time :

10 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Operating Temperature (Max) :

150°C

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PDSO-F6

Input Capacitance :

70pF

Number of Elements :

1

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes