RSS110N03FU6TB
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- Mfr.Part #
- RSS110N03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A 8SOP
- Stock
- 46,238
- In Stock ：
- 46,238
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 10V
- Turn-Off Delay Time :
- 60 ns
- Dual Supply Voltage :
- 30V
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 30 ns
- Rds On (Max) @ Id, Vgs :
- 10.7m Ω @ 11A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- Resistance :
- 10.3mOhm
- Threshold Voltage :
- 2.5V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 17ns
- Turn On Delay Time :
- 9 ns
- Termination :
- SMD/SMT
- Published :
- 2004
- Factory Lead Time :
- 40 Weeks
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 2.5 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Power Dissipation :
- 2W
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 11A
- Power Dissipation-Max :
- 2W Ta
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Drain to Source Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Datasheets
- RSS110N03FU6TB
N-Channel Tape & Reel (TR) 10.7m Ω @ 11A, 10V 1300pF @ 10V 17nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS110N03FU6TB Overview
A device's maximum input capacitance is 1300pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.5V.This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
RSS110N03FU6TB Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 60 ns
a threshold voltage of 2.5V
RSS110N03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS110N03FU6TB applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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