RSS100N03FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1070pF @ 10V

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

0.0189Ohm

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

40A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Vgs (Max) :

±20V

Series :

Automotive, AEC-Q101

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Power Dissipation-Max :

2W Ta

Surface Mount :

yes

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

13.3m Ω @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2017

JESD-30 Code :

R-PDSO-G8

Packaging :

Cut Tape (CT)

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)