RS3E180ATTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

18A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 5mA

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 18A, 10V

DS Breakdown Voltage-Min :

30V

Avalanche Energy Rating (Eas) :

81 mJ

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Pulsed Drain Current-Max (IDM) :

72A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Surface Mount :

yes

Packaging :

Cut Tape (CT)

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

1.4W Ta

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 15V

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0061Ohm

JESD-30 Code :

R-PDSO-G8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Form :

Gull wing