RS3E135BNGZETB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Factory Lead Time :

20 Weeks

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 9.5A, 10V

Mounting Type :

Surface Mount

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Terminal Position :

Dual

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G8

Drain Current-Max (Abs) (ID) :

13.5A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 4.5V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 15V

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Power Dissipation-Max :

2W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)