RS3E075ATTB
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- Mfr.Part #
- RS3E075ATTB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 8SOP
- Stock
- 13,694
- In Stock ：
- 13,694
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Published :
- 2014
- DS Breakdown Voltage-Min :
- 30V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- -7.5A
- Power Dissipation-Max :
- 2W Ta
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Threshold Voltage :
- -2.5V
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 8
- ECCN Code :
- EAR99
- Resistance :
- 18mOhm
- FET Type :
- P-Channel
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 23.5m Ω @ 7.5A, 10V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 20 Weeks
- Drain to Source Voltage (Vdss) :
- 30V
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 15V
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 30A
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 4.2 mJ
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Datasheets
- RS3E075ATTB
P-Channel Cut Tape (CT) 23.5m Ω @ 7.5A, 10V ±20V 1250pF @ 15V 25nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
RS3E075ATTB Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4.2 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1250pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -7.5A continuous drain current (ID).Peak drain current is 30A, which is the maximum pulsed drain current.In this case, the threshold voltage of the transistor is -2.5V, which means that it will not activate any of its functions when its threshold voltage reaches -2.5V.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
RS3E075ATTB Features
the avalanche energy rating (Eas) is 4.2 mJ
a continuous drain current (ID) of -7.5A
based on its rated peak drain current 30A.
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RS3E075ATTB Applications
There are a lot of ROHM Semiconductor
RS3E075ATTB applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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