RS3E095BNGZETB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Power Dissipation-Max :

2W Tc

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 9.5A, 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

36A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Factory Lead Time :

20 Weeks

Avalanche Energy Rating (Eas) :

12.9 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Terminations :

8

Packaging :

Cut Tape (CT)

Drain Current-Max (Abs) (ID) :

9.5A

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Published :

2017

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 15V

Drain-source On Resistance-Max :

0.0219ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED