RRL025P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Operating Temperature :

150°C TJ

Terminal Position :

Dual

Rise Time :

16ns

JESD-609 Code :

e2

Power Dissipation-Max :

320mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Package / Case :

6-SMD, Flat Leads

Number of Pins :

6

Drain-source On Resistance-Max :

0.075Ohm

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.5A, 10V

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

7 ns

Element Configuration :

Single

Published :

2014

Pbfree Code :

yes

Terminal Finish :

TIN COPPER

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Fall Time (Typ) :

33 ns

Drain to Source Breakdown Voltage :

-30V

Pin Count :

6

Vgs (Max) :

±20V

Turn-Off Delay Time :

50 ns

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

2.5A

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Factory Lead Time :

20 Weeks

Transistor Application :

SWITCHING

Power Dissipation :

1W

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10