RRL035P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Power Dissipation-Max :

320mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Transistor Application :

SWITCHING

Number of Pins :

6

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.5A, 10V

Lead Free :

Lead Free

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Turn On Delay Time :

7 ns

Factory Lead Time :

20 Weeks

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Pin Count :

6

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.05Ohm

Fall Time (Typ) :

40 ns

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

JESD-609 Code :

e2

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Rise Time :

9ns

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

3.5A

Package / Case :

6-SMD, Flat Leads

Turn-Off Delay Time :

75 ns