RQ3G100GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Power Dissipation-Max :

2W Ta

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

10A

Reach Compliance Code :

not_compliant

Number of Elements :

1

FET Type :

N-Channel

Transistor Element Material :

SILICON

Threshold Voltage :

2.5V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerVDFN

Terminal Position :

Dual

DS Breakdown Voltage-Min :

40V

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Resistance :

11mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

40A

Rds On (Max) @ Id, Vgs :

14.3m Ω @ 10A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

5

Published :

2014

Factory Lead Time :

20 Weeks

JESD-30 Code :

R-PDSO-F5

Mount :

Surface Mount

Number of Pins :

8

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 20V

Avalanche Energy Rating (Eas) :

15.6 mJ

ECCN Code :

EAR99