RQ3G150GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

20 Weeks

Pulsed Drain Current-Max (IDM) :

60A

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

40V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0089Ohm

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 20V

Number of Elements :

1

Terminal Position :

Dual

Power Dissipation-Max :

20W Tc

Package / Case :

8-PowerVDFN

Surface Mount :

yes

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

17 mJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Type :

Surface Mount

Published :

2017

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F5

Terminal Form :

Flat

DS Breakdown Voltage-Min :

40V

Vgs (Max) :

±20V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 15A, 10V

Operating Temperature :

-55°C~150°C TJ