RP1E100RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

JESD-609 Code :

e2

Number of Terminations :

6

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Continuous Drain Current (ID) :

10A

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 10V

Mount :

Surface Mount

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Pin Count :

6

Power Dissipation :

2W

Drain to Source Breakdown Voltage :

-30V

Published :

2010

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Pins :

6

Transistor Element Material :

SILICON

Power Dissipation-Max :

2W Ta

Qualification Status :

Not Qualified

Terminal Finish :

TIN COPPER

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

6-SMD, Flat Leads

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260