RP1E090RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Finish :

TIN COPPER

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0294Ohm

Pbfree Code :

yes

ECCN Code :

EAR99

FET Type :

P-Channel

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Pin Count :

6

Package / Case :

6-SMD, Flat Leads

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 10V

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

9A

Rds On (Max) @ Id, Vgs :

16.9m Ω @ 9A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power Dissipation-Max :

2W Ta

Transistor Application :

SWITCHING

Published :

2010

Mount :

Surface Mount

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-609 Code :

e2

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 5V

Continuous Drain Current (ID) :

9A