RP1E050RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Case Connection :

DRAIN

Polarity/Channel Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

5A

Terminal Form :

Flat

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Number of Terminations :

6

Max Operating Temperature :

150°C

Pin Count :

6

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

58mOhm

Input Capacitance :

850pF

ECCN Code :

EAR99

Pbfree Code :

yes

Continuous Drain Current (ID) :

5A

Pulsed Drain Current-Max (IDM) :

20A

JESD-609 Code :

e2

Max Power Dissipation :

2W

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

TIN COPPER

Published :

2010

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation :

2W

Terminal Position :

Dual

Rds On Max :

50 mΩ

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

6

Package / Case :

SMD/SMT