RP1E075RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-F6

Power Dissipation-Max :

2W Ta

Operating Temperature :

150°C TJ

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

10

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e2

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Terminal Finish :

TIN COPPER

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.021Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

21m Ω @ 7.5A, 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Published :

2010

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 10V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

7.5A

Pin Count :

6

Transistor Application :

SWITCHING

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Terminations :

6

Pulsed Drain Current-Max (IDM) :

30A

Case Connection :

DRAIN

Package / Case :

6-SMD, Flat Leads