RN4990FE,LF(CT

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Mfr.Part #
RN4990FE,LF(CT
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS NPN/PNP PREBIAS 0.1W ES6
Stock
11,636
In Stock :
11,636

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Collector Emitter Voltage (VCEO) :
-50V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Packaging :
Cut Tape (CT)
Polarity :
NPN, PNP
Emitter Base Voltage (VEBO) :
-5V
Weight :
3.005049mg
Factory Lead Time :
18 Weeks
Continuous Collector Current :
-100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Voltage - Collector Emitter Breakdown (Max) :
50V
Frequency - Transition :
250MHz 200MHz
hFE Min :
120
Number of Channels :
2
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA 5V
Package / Case :
SOT-563, SOT-666
Resistor - Base (R1) :
4.7k Ω
Current - Collector Cutoff (Max) :
100nA ICBO
Current - Collector (Ic) (Max) :
100mA
Transistor Type :
1 NPN, 1 PNP - Pre-Biased (Dual)
Max Power Dissipation :
100mW
RoHS Status :
RoHS Compliant
Datasheets
RN4990FE,LF(CT
Introducing Transistors - Bipolar (BJT) - Arrays, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN4990FE,LF(CT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:2, Package / Case:SOT-563, SOT-666, RN4990FE,LF(CT pinout, RN4990FE,LF(CT datasheet PDF, RN4990FE,LF(CT amp .Beyond Transistors - Bipolar (BJT) - Arrays, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN4990FE,LF(CT ,we also offer PUMD2,125, PUMD2,115, PUMD2,165, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation RN4990FE,LF(CT


RN4990FE,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at

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