RN4987,LF(CT

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

-6V

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

300mV

Max Power Dissipation :

200mW

Current - Collector (Ic) (Max) :

100mA

Polarity :

NPN, PNP

Weight :

6.010099mg

Resistor - Base (R1) :

10kOhms

hFE Min :

80

Number of Channels :

2

Supplier Device Package :

US6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Frequency - Transition :

250MHz 200MHz

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

50V

Continuous Collector Current :

-100mA

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Published :

2014

Resistor - Emitter Base (R2) :

47kOhms

Power - Max :

200mW