RN4910,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Supplier Device Package :

US6

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Max Collector Current :

100mA

Length :

2mm

Height :

900μm

Power - Max :

200mW

Current - Collector (Ic) (Max) :

100mA

Emitter Base Voltage (VEBO) :

5V

hFE Min :

120

Collector Base Voltage (VCBO) :

50V

Voltage - Collector Emitter Breakdown (Max) :

50V

Max Operating Temperature :

150°C

Continuous Collector Current :

100mA

Packaging :

Cut Tape (CT)

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistor - Base (R1) :

4.7kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 5V

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN, PNP

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Number of Channels :

2

Frequency - Transition :

200MHz

Width :

1.25mm

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

RoHS Compliant

Published :

2014

Max Power Dissipation :

200mW