RN2427TE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Emitter Base (R2) :

10 k Ω

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

PNP - Pre-Biased

Emitter Base Voltage (VEBO) :

-6V

Packaging :

Tape and Reel (TR)

Pin Count :

3

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 100mA 1V

ECCN Code :

EAR99

hFE Min :

90

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Transition Frequency :

200MHz

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Radiation Hardening :

No

Published :

2009

Frequency - Transition :

200MHz

Power Dissipation :

200mW

Max Collector Current :

800mA

Max Power Dissipation :

200mW

Element Configuration :

Single

Polarity :

PNP

Number of Pins :

3

Terminal Form :

Gull wing

Max Frequency :

200MHz

RoHS Status :

RoHS Compliant

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 4.55

Max Operating Temperature :

150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Collector Current :

-800mA

Terminal Position :

Dual

Resistor - Base (R1) :

2.2 k Ω