RN2427TE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

200mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 100mA 1V

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Resistor - Base (R1) :

2.2 k Ω

Power Dissipation :

200mW

hFE Min :

90

Number of Elements :

1

Resistor - Emitter Base (R2) :

10 k Ω

Mount :

Surface Mount

Radiation Hardening :

No

Pin Count :

3

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 4.55

Element Configuration :

Single

Terminal Form :

Gull wing

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

-6V

Max Frequency :

200MHz

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

50V

Transition Frequency :

200MHz

HTS Code :

8541.21.00.75

Terminal Position :

Dual

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transistor Type :

PNP - Pre-Biased

Published :

2009

Max Collector Current :

800mA

Packaging :

Tape and Reel (TR)

Frequency - Transition :

200MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Collector Current :

-800mA

Collector Emitter Breakdown Voltage :

50V