RN2306,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Weight :

28.009329mg

Length :

2mm

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Width :

1.25mm

Max Operating Temperature :

150°C

Package / Case :

SC-70, SOT-323

Max Power Dissipation :

100mW

Resistor - Base (R1) :

4.7 kOhms

Collector Base Voltage (VCBO) :

-50V

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

16 Weeks

Collector Emitter Breakdown Voltage :

50V

Power - Max :

100mW

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

USM

Transistor Type :

PNP - Pre-Biased

Continuous Collector Current :

-100mA

Polarity :

PNP

Number of Pins :

3

hFE Min :

80

Emitter Base Voltage (VEBO) :

-5V

Frequency - Transition :

200MHz

Collector Emitter Voltage (VCEO) :

300mV

Height :

900μm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

50V

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47 kOhms

Current - Collector (Ic) (Max) :

100mA

Mount :

Surface Mount