RN2306,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Length :

2mm

Power - Max :

100mW

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

-5V

Collector Base Voltage (VCBO) :

-50V

Supplier Device Package :

USM

hFE Min :

80

Mount :

Surface Mount

Max Power Dissipation :

100mW

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

4.7 kOhms

Factory Lead Time :

16 Weeks

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Resistor - Emitter Base (R2) :

47 kOhms

Published :

2014

Height :

900μm

Packaging :

Cut Tape (CT)

Polarity :

PNP

Number of Pins :

3

Current - Collector (Ic) (Max) :

100mA

Width :

1.25mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP - Pre-Biased

Continuous Collector Current :

-100mA

Weight :

28.009329mg

Collector Emitter Breakdown Voltage :

50V

Frequency - Transition :

200MHz

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

SC-70, SOT-323

Voltage - Collector Emitter Breakdown (Max) :

50V

Max Breakdown Voltage :

50V

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount