RN1971TE85LF

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Mfr.Part #
RN1971TE85LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS 2NPN PREBIAS 0.2W US6
Stock
1
In Stock :
1

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Resistor - Base (R1) :
10k Ω
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
RoHS Status :
RoHS Compliant
Packaging :
Cut Tape (CT)
Published :
2009
Factory Lead Time :
11 Weeks
Polarity :
NPN
Mount :
Surface Mount
Mounting Type :
Surface Mount
Element Configuration :
Dual
Continuous Collector Current :
100mA
Frequency - Transition :
250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA 5V
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
50V
hFE Min :
120
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
2 NPN - Pre-Biased (Dual)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
6-TSSOP, SC-88, SOT-363
Max Breakdown Voltage :
50V
Number of Pins :
6
Max Power Dissipation :
200mW
Collector Emitter Voltage (VCEO) :
50V
Max Collector Current :
100mA
Datasheets
RN1971TE85LF
Introducing Transistors - Bipolar (BJT) - Arrays, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN1971TE85LF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Pins:6, RN1971TE85LF pinout, RN1971TE85LF datasheet PDF, RN1971TE85LF amp .Beyond Transistors - Bipolar (BJT) - Arrays, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN1971TE85LF ,we also offer PUMD2,125, PUMD2,115, PUMD2,165, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation RN1971TE85LF


RN1971TE85LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at

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