RN1903,LF(CT

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Frequency - Transition :

250MHz

RoHS Status :

RoHS Compliant

Published :

2014

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 5V

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Max Collector Current :

100mA

Operating Temperature (Max) :

150°C

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200mW

JESD-30 Code :

R-PDSO-G6

Resistor - Base (R1) :

22k Ω

Mount :

Surface Mount

Transistor Type :

2 NPN - Pre-Biased (Dual)

Terminal Form :

Gull wing

Pbfree Code :

yes

Max Power Dissipation :

200mW

Resistor - Emitter Base (R2) :

22k Ω

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Packaging :

Cut Tape (CT)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Max Breakdown Voltage :

50V

Polarity/Channel Type :

NPN

Factory Lead Time :

12 Weeks

Collector Emitter Voltage (VCEO) :

300mV

Transition Frequency :

250MHz

Transistor Element Material :

SILICON