RN1903,LF(CT
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- Mfr.Part #
- RN1903,LF(CT
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.2W US6
- Stock
- 285,885
- In Stock ：
- 285,885
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Mount :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Max Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 2
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- Unknown
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Published :
- 2014
- RoHS Status :
- RoHS Compliant
- Power - Max :
- 200mW
- Mounting Type :
- Surface Mount
- Operating Temperature (Max) :
- 150°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 10mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Frequency - Transition :
- 250MHz
- Max Breakdown Voltage :
- 50V
- Resistor - Emitter Base (R2) :
- 22k Ω
- Collector Emitter Breakdown Voltage :
- 50V
- Resistor - Base (R1) :
- 22k Ω
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 300mV
- Transition Frequency :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Max Collector Current :
- 100mA
- JESD-30 Code :
- R-PDSO-G6
- Number of Terminations :
- 6
- Datasheets
- RN1903,LF(CT
RN1903,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at
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