RN1314,LF
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- Mfr.Part #
- RN1314,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- PB-F USM TRANSISTOR PD 100MW F 2
- Stock
- 2,700
- In Stock ：
- 2,700
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Series :
- Automotive, AEC-Q101
- Brand :
- Toshiba
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- RoHS :
- Details
- Subcategory :
- Transistors
- Packaging :
- MouseReel
- Power - Max :
- 100 mW
- Transistor Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 500nA
- Current - Collector (Ic) (Max) :
- 100 mA
- Resistor - Emitter Base (R2) :
- 10 kOhms
- Typical Resistor Ratio :
- 0.1
- Transistor Type :
- NPN - Pre-Biased
- Continuous Collector Current :
- 100 mA
- Minimum Operating Temperature :
- - 55 C
- Qualification :
- AEC-Q101
- Package :
- Tape and Reel (TR)
- Product Category :
- Bipolar Transistors - Pre-Biased
- Frequency - Transition :
- 250 MHz
- Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Manufacturer :
- Toshiba
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Resistor - Base (R1) :
- 1 kOhms
- Channel Mode :
- Enhancement
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Supplier Device Package :
- USM
- Product Type :
- BJTs - Bipolar Transistors - Pre-Biased
- Maximum Operating Temperature :
- + 150 C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA, 5V
- Mounting Style :
- SMD/SMT
- Datasheets
- RN1314,LF
RN1314,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at
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