RM5N650IP

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Mfr.Part #
RM5N650IP
Manufacturer
Rectron USA
Package / Case
TO-251-3 Stub Leads, IPak
Datasheet
Download
Description
MOSFET N-CHANNEL 650V 5A TO251
Stock
27,143
In Stock :
27,143

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Manufacturer :
Rectron USA
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Product Status :
Active
Packaging :
Case - TO-251
Voltage :
Vdss - 650V
Package / Case :
TO-251-3 Stub Leads, IPak
Channel Mode :
Enhancement
Transistor Type :
1 N-Channel
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
Configuration :
Single
Series :
-
Input Capacitance (Ciss) (Max) @ Vds :
460 pF @ 50 V
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C ~ 150°C (TJ)
Supplier Device Package :
TO-251
RoHS :
Y
Brand :
Rectron
Rds On (Max) @ Id, Vgs :
900mOhm @ 2.5A, 10V
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
650 V
Current - Continuous Drain (Id) @ 25°C :
5A (Tc)
Product Category :
MOSFET
Package :
Tube
FET Feature :
-
Subcategory :
MOSFETs
Mounting Type :
Through Hole
Capacitance :
Input Capacitance (Ciss) - 460pF
Power Dissipation (Max) :
49W (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Maximum Operating Temperature :
+ 150 C
Number of Channels :
1 Channel
Product Type :
MOSFET
Manufacturer :
Rectron
Rise Time :
3 ns
Datasheets
RM5N650IP
Introducing Transistors - FETs, MOSFETs - Single Rectron USA RM5N650IP from Chip IC,where excellence meets affordability. This product stands out with its Voltage:Vdss - 650V, Package / Case:TO-251-3 Stub Leads, IPak, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Number of Channels:1 Channel, RM5N650IP pinout, RM5N650IP datasheet PDF, RM5N650IP amp .Beyond Transistors - FETs, MOSFETs - Single Rectron USA RM5N650IP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Rectron USA RM5N650IP


N-Channel Case - TO-251 900mOhm @ 2.5A, 10V ±30V 460 pF @ 50 V 650 V TO-251-3 Stub Leads, IPak

RM5N650IP Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 460 pF @ 50 V.This transistor requires a drain-source voltage (Vdss) of 650 V.

RM5N650IP Features


a 650 V drain to source voltage (Vdss)


RM5N650IP Applications


There are a lot of Rectron USA
RM5N650IP applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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