RM5N650LD

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

900mOhm @ 2.5A, 10V

Series :

-

Power Dissipation (Max) :

49W (Tc)

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Package :

Tape and Reel (TR)

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

650 V

FET Feature :

-

Product Status :

Active

Supplier Device Package :

TO-252-2

Operating Temperature :

-55°C ~ 150°C (TJ)

Capacitance :

Input Capacitance (Ciss) - 460pF

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

5A (Tc)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

RoHS :

Y

Voltage :

Vdss - 650V

Manufacturer :

Rectron

Input Capacitance (Ciss) (Max) @ Vds :

460 pF @ 50 V

Packaging :

Case - TO-252